Iranian Journal of Materials Science and Engineering

 
 

• Nano composite GPE based on PAN as polymer host and Sodium fluoride (NaF) as dopant salt and Al₂O₃ as nano filler in the form of thin films through solution casting technique consuming N,N-dimethyl formamide (DMF) as a common solvent.
• NCGPE films have been prepared by solution casting technique and characterized.
• The salt complexation and nano filler with the polymer is proved by XRD and FTIR studies.
• Inter planar spacing is also verified theoretically and experimentally. It is clear from SEM that with increasing of salt and nano filler concentration the surface of the films roughness has been decreased and phase segregation is revealed with cylindrical shape.
• The surface morphology of the samples were characterized by SEM. While increase in conductivity with increasing concentration of nano filler and temperature due to increasing of the amorphous nature. With 1-4 wt% Nano Composite compared filler free electrolyte. The ionic transference number data indicate that the conduction in these NCGPE is predominantly due to ions rather than electrons. Using PAN: NaF (70:30) gel polymer electrolyte system solid–state battery (Na/PAN: NaF (70:30)
• +EC+DMF/ (I₂+C+Electrolyte)) has been fabricated and their discharge profiles were studied and these results were found to be comparable with current results.

 
 

1. Interfacial layers of Al/Brass, from the solid brass side to Al side, are analysed.
2. The effect of rotational speed and solid/melt fraction on the formation of reaction layer are studied.
3. Gas entrapment and surface aluminium oxide film entrainment are shown and the possible reasons are discussed.
4. Possible ways of reduction of the reaction layer seems to be higher rotational speed and precise S/M fraction.

The lowest value of K_∞ is obtained with   level -1 for Ep, tp, Ga and level 1 for ta.
Considering constraint related to the stiffness ratio, . The best selection appeared to be the level 0 for both parameters, which correspond to Ep=145 GPa and tp=1mm.
Considering all design constraints the final optimum design is obtained with the level 0 for Ep and tp, the level-1 for Ga and the level 1for ta.