Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (^tBuNH₂) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films were investigated by X-ray diffraction (XRD) technique and verified the formation of polycrystalline and mixed phases of hexagonal (100), & (110) oriented AlN and orthogonal (002) & cubic (333) oriented BN. The crystallite size was smaller and dislocation density was higher as the deposition was conducted with lowest total gas mixture ratio (25 sccm). Improved surface properties were detected for film deposited using lowest total gas mixture ratio and confirmed by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The composition of films showed the existence of higher concentration of B in the film prepared using lower total gas mixture ratio and confirmed by energy dispersive X-ray Spectroscopy (EDX).

Keywords: B-AlN, thin film synthesis, CVD, structural parameter, surface analysis.

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