Volume 12, Number 4 (December 2015)                   IJMSE 2015, 12(4): 19-27 | Back to browse issues page



DOI: 10.22068/ijmse.12.4.19

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Maleki M, Rozati M. Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD. IJMSE. 2015; 12 (4) :19-27
URL: http://ijmse.iust.ac.ir/article-1-671-en.html

Abstract:   (1920 Views)

In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spectrophotometer respectively. IV measurements of these heterojunctions showed that turn on voltage and series resistance will increase with increasing substrate temperature in polycrystalline Si, while in single crystal Si, turn on voltage will decrease. Although they are acceptable diodes, their efficiency as a heterojunction solar cell are so low

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